The paper is published in Journal of Physics and Chemistry of Solids, 61, p. 2007-2012 (2000).

EXAFS and electrical studies of new narrow-gap semiconductors: InTe1-xSex and In1-xGaxTe

A. I. Lebedev, A. V. Michurin, I. A. Sluchinskaya, V. N. Demin and I. H. Munro
Physics Department, Moscow State University, Moscow, 119899, Russia
Chemistry Department, Moscow State University, Moscow, 119899, Russia
CCLRC, Daresbury Laboratory, Warrington, WA4 4AD, UK

The local environment of Ga, Se and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms are substitutional impurities, which enter the In(1), Te and In(2) positions in the InTe structure, respectively. The electrical measurements revealed the In1-xGaxTe and InTe1-xSex solid solutions become semiconductors at x>0.24 and >0.15, respectively.

Keywords: X-ray absorption spectroscopy, synchrotron radiation, local environment, semiconductor solid solutions, indium gallium telluride, indium telluride selenide, indium thallium telluride, structure

Other works on XAFS studies