Alexander E. Yunovich

Professor of Physics
Graduated from Moscow State University (1953). Ph.D. in Physics (1959), Dr.Sci. (1989)

Scientific interests:

Physics of semiconductors, surface properties, field effect in Ge and Si, radiative recombination in III-V and IV-VI compounds, semiconductor lasers and light-emitting diodes, superlattices and 2D-structures.

Selected publications:

• K.G. Zolina, V.E. Kudryashov, A.N. Turkin, A.E. Yunovich, S. Nakamura. Luminescence Spectra of Superbright Blue and Green InGaN/AlGaN/GaN Light Emitting Diodes. MRS Internet J. Nitride Semicond. Res. 1, N 11 (1996).

• A.E. Yunovich, V.E. Kudryashov, S.S. Mat. Res. Soc. Symp. Proc. 449, 1167-1172 (1997).

• S.S. Mamakin, A.N. Turkin, A.N. Kovalev, F.I. Manyakhin. Spectra and quantum efficiency of light-emitting diodes based on GaN heterostructures with quantum wells. Phys. Stat. Sol. (a) 176, 125-130 (1999).

• V. Schwegler, S.S. Schad, C. Kirchner, M. Seybouth, M. Kamp, K.J. Ebeling, V.E. Kudryashov, A.N. Turkin, A.E. Yunovich, U. Stempele, A. Link, W. Limmler, R. Sauer. Ohmic heating of LEDs during operation: determination of the junction temperature and its influence on device performance. Phys. Stat. Sol. (a) 176, 783-786 (1999).

• A.E. Yunovich, V.E. Kudryashov, S.S. Mamakin, A.N. Turkin, A.N. Kovalev, F.I. Manyakhin. DependenÓe of aging on the inhomogeneties in InGaN/AlGaN/GaN light-emitting diodes. MRS Internet J. Nitride Semicond. Res. 5S1, N W11.25 (2000).

• S.K. Obyden, G.V. Saparin, P.G. Ivannikov, A.E. Yunovich, M. Leroux, S. Dalmasso, B. Beaumount. Application of composite contrast SEM-Mode to the study of defects in InGaN/AlGaN/GaN heterostructures. Scanning 22, 126-127 (2000).

• A.E. Yunovich, V.E. Kudryashov. Energy Diagram and Recombination Mechanisms in Heterostructures InGaN/AlGaN/GaN with Quantum Wells. Phys. Stat. Sol. (b) 228, 141-145 (2001).

• A.E. Yunovich, S.S. Mamakin, F.I. Manyakhin, A.B. Wattana, N. Gardner, W. Goetz, M. Misra, S. Stockman. Electrical Properties and Luminescence Spectra of Light-Emitting Diodes with Modulated Doped InGaN/GaN Quantum Wells. Mat. Res. Soc. Symp. Proc. 711, K2.4, p. 71-75 (2002).

• A.E. Yunovich, V.E. Kudryashov, A.N. Turkin, M. Leroux, S. Dalmasso. Tunnel effects in liminescence spectra of GaN-based heterostructures. MRS Symp. Proc. 743, L11.4, p. 647-652 (2003).

• A.E. Yunovich. Light Emitting Diodes as the Base of Illumination in the Future. Light & Engineering 11, 5-12 (2003).

• L.P. Avakyants, M.L. Badgutdinov, P.Yu. Bokov, A.V. Chervyakov, S.S. Shirokov, A.E. Yunovich, A.A. Bogdanov, E.D. Vasil'eva, D.A. Nikolaev, A.V. Feopentov. Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures. Semiconductors 41, 1060 (2007).

• N.A. Gal'china, L.M. Kogan, N.P. Soschin, S.S. Shirokov, A.E. Yunovich. Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures InGaN/AlGaN/GaN coated by phosphors. Semiconductors 41, 1126 (2007).

• M.L. Badgutdinov, A.E. Yunovich. Emission spectra of InGaN/AlGaN/GaN quantum well heterostructures: model of the two-dimensional joint density of states. Semiconductors, 42, p. 429-438 (2008).

E-mail: yunovich@scon175.phys.msu.su
Phone: (495) 939-2994