Oleg G. Koshelev

Senior Research Scientist
Graduated from Moscow State University (1956). Ph.D. in Physics (1967)

Scientific interests:

Investigation of photoelectric and optical properties of semiconductors using infrared, far infrared and millimeter waves. Development of new photoelectric methods of investigation.

Selected publications:

• O.G. Koshelev and I.V. Mikhailov. A phase method for defining the life time of minority charge carriers in the base of photoconverter. Appl. Sol. Energy 29, N 4, 11 (1993).

• O.G. Koshelev, V.A. Morozova, E.Ju. Barinova, G.M. Grigorieva and E.H. Tkacheva. Measurement of short lifetimes of minority charge carriers in silicon solar cells irradiated by fast electrons. Moscow University Physics Bulletin 48, N 4, 80 (1993).

• O.G. Koshelev and V.A. Morozova. A method of determination of photoelectrical properties of minority charge carriers in substrates of diode structures. Patent of Russia N 2019890 (1994).

• O.G. Koshelev, V.A. Morozova. A nondestructive method for measuring the photoelectric parameters of wafers with p-n-junctions. Solid-State Electron. 39, 1379 (1996).

• Garvin V.N., Kozlova Y.P., Veretenkin E.P., Bowles T.J., Eremin V.K., Verbitskaya E.M., Markov A.V., Polakov A.Y., Koshelev O.G, Morozova V.A. Bulk GaAs as a Solar Neutrino Detector. Nuclear Instruments and Methods in Physics Research A 466, 119 (2001).

• Kozlova J.P., Bowles T.J., Eremin V.K., Gavrin V.N., Koshelev O.G., Markov A.V., Morozova V.A., Polyakov A.J., Verbitskaya E.M., Veretenkin E.P. A comparative study of EL2 and other deep centers in undoped SI GaAs using optical absorption spectra and photoconductivity measurements. Nuclear Instruments and Methods in Physics Research. Section A 512, 1-7 (2003).